Step Bunching with Alternation of Structural Parameters

By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs irrespective of the direction of the drift if the step distance is large. Like the bunching of permeable steps, the type of large terraces is determined by the drift direction. With step-down drift, step bunches grows faster than those with step-up drift. The ratio of the growth rates is larger than the ratio of the diffusion coefficients. Evaporation of adatoms, which does not cause the step bunching, decreases the difference. If only the alternation of kinetic coefficient is taken into account, the step bunching occurs with step-down drift. In an early stage, the initial fluctuation of the step distance determines the type of large terraces, but in a late stage, the type of large terraces is opposite to the case of alternating diffusion coefficient.Comment: 8pages, 16 figure

Molecules participating in insect immunity of Sarcophaga peregrina

Pricking the body wall of Sarcophaga peregrina (flesh fly) larvae with a needle activated the immune system of this insect and induced various immune molecules, including antibacterial proteins, in the hemolymph. In this review, I summarize and discuss the functions of these immune molecules, with particular emphasis on the dual roles of some of these molecules in defense and development

Single-electron transistor effect in a two-terminal structure

A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in structures with an extremely small central island confined between tunnel barriers like a nanometer-sized quantum dot or a macromolecule probed with a tunneling microscope), where it is impossible to provide a gate electrode for control of the tunnel current.Comment: 5 pages, 2 figure

Investigation of marmoset hybrids (Cebuella pygmaea x Callithrix jacchus) and related Callitrichinae (Platyrrhini) by cross-species chromosome painting and comparative genomic hybridization

We report on the cytogenetics of twin offspring from an interspecies cross in marmosets (Callitrichinae, Platyrrhini), resulting from a pairing between a female Common marmoset (Callithrix jacchus, 2n = 46) and a male Pygmy marmoset (Cebuella pygmaea, 2n = 44). We analyzed their karyotypes by multi-directional chromosome painting employing human, Saguinus oedipus and Lagothrix lagothricha chromosome-specific probes. Both hybrid individuals had a karyotype with a diploid chromosome number of 2n = 45. As a complementary tool, interspecies comparative genomic hybridization (iCGH) was performed in order to screen for genomic imbalances between the hybrids and their parental species, and between Callithrix argentata and S. oedipus, respectively. Copyright (C) 2005 S. Karger AG, Basel

Two Dimensional Quantum Mechanical Modeling of Nanotransistors

Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively using simple one dimensional ballistic models, two dimensional (2D) quantum mechanical simulation is important for quantitative results. In this paper, we present a framework for 2D quantum mechanical simulation of a nanotransistor / Metal Oxide Field Effect Transistor (MOSFET). This framework consists of the non equilibrium Green's function equations solved self-consistently with Poisson's equation. Solution of this set of equations is computationally intensive. An efficient algorithm to calculate the quantum mechanical 2D electron density has been developed. The method presented is comprehensive in that treatment includes the three open boundary conditions, where the narrow channel region opens into physically broad source, drain and gate regions. Results are presented for (i) drain current versus drain and gate voltages, (ii) comparison to results from Medici, and (iii) gate tunneling current, using 2D potential profiles. Methods to reduce the gate leakage current are also discussed based on simulation results.Comment: 12 figures. Journal of Applied Physics (to appear